Produk
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4H-N 8 inci SIC substrat wafer silikon karbida dummy penyelidikan gred 500um ketebalan
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4H-N/6H-N SIC Wafer Reasearch Production Dummy Grade Dia150mm Silicon Carbide Substrat
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8inch 200mm Silicon Carbide SIC Wafers 4H-N Jenis Pengeluaran Gred 500um Ketebalan
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Dia300x1.0mmt ketebalan nilam wafer c-plane ssp/dsp
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8 inci 200mm nilam substrat nilam nilam wafer ketebalan nipis 1SP 2SP 0.5mm 0.75mm
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HPSI sic wafer dia: ketebalan 3 inci: 350um ± 25 μm untuk elektronik kuasa
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8 inci sic silikon karbida wafer 4H-n jenis 0.5mm gred pengeluaran gred gred gred custom digilap
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Single Crystal Al2O3 99.999% Dia200mm Wafers Sapphire 1.0mm 0.75mm Ketebalan
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156mm 159mm 6 inci wafer sapphire untuk dsp ttv pesawat carrierc-plane
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C/a/m paksi 4 inci sapphire wafers tunggal kristal al2O3, SSP DSP substrat nilam kekerasan tinggi
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3Inch High Purity Semi-Insulating (HPSI) SIC Wafer 350um Grade Grade Dummy
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P-jenis substrat sic wafer dia2inch produk baru